Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot

Mr. Scott Liles, Ruoyu Li, Mr. Chih-Hwan Yang, Dr. Fay Hudson, Dr. Menno Veldhorst, Prof. Andrew Dzurak, and Dr. Alex Hamilton

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Received: 31st January 18

We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole quantum dot and demonstrate operation down to the last hole. The spin shell filling sequence is characterised for the first six holes using magneto-spectroscopy, and is consistent with the Fock-Darwin states of a circular two-dimensional quantum dot. At low magnetic field we observe spin filling, which obeys Hunds first rule, while at high magnetic field we observe the singlet triplet transition for the two hole ground state. Finally, we investigate the orbital spectrum using pulse bias spectroscopy and find that hole-hole interaction energy is 90% of the orbital energy, which causes the two-hole system to be on the verge of having a ferromagnetic ground state. These results provide experimental evidence of the orbital spin physics for silicon surface-gated artificial atoms operating in the last hole regime.

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