Erbium implanted silicon for solid-state quantum technologies

Mark A. Hughes, Naitik A. Panjwani, Matias Urdampilleta, Ilana Wisby, Kevin P. Homewood, Ben Murdin, Tobias Lindström, J. David Carey

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Received Date: 12th May 20

Quantum technology (QT) platforms with telecommunications and integrated circuit (IC) processing compatibility have important implications for the long-distance transfer of quantum information, and QT platforms based on ion implantation are inherently scalable. Here we establish the potential of Er implanted Si as a scalable QT platform with telecommunications and IC processing compatibility through coherence and superconducting resonator coupling measurements. The electron spin coherence time of Er implanted Si with an Er concentration of 3×1017 cm-3 is ~10 μs at 5 K. The spin echo decay profile displays strong modulation due to super-hyperfine interaction with 29Si nuclei beyond the first coordination sphere; this interaction could be utilised for the telecommunications wavelength addressing of 29Si qubits. The collective coupling strength between a superconducting NbN lumped-element microresonator and Er implanted Si with an Er concentration of 1017 cm-3 at 20 mK was ~ 1MHz.

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This is an abstract of a preprint hosted on an independent third party site. It has not been peer reviewed but is currently under consideration at Nature Communications.

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