Realization of Ohmic-contact and velocity saturation in organic field-effect transistors by crystallized monolayer

Boyu Peng, Ho Yuen Lau, Ming Chen and Paddy K. L. Chan

Go to the profile of Nature Communications
Aug 08, 2019
0
0

Received Date: 22nd July 19

The contact resistance limits the down-scaling and operating range of OFETs. With the monolayer (1L) organic crystals and non-destructive metal/semiconductor interfaces, intrinsic mobility of 12.5 cm2V-1s-1and Ohmic contact resistance of 40 Ω·cm were achieved. The on/off ratio maintained at 103even at a small VDSof -0.1 mV. The high current density of 4.2 μA/μm was achieved with the 1L-crystal as the active layer. At such high current density, the velocity saturation and channel self-heating effects are observed in OFETs for the first time. The findings suggested other than the low contact resistance and high-resolution lithography, thermal management in the high mobility OFETs is also critical for the further development of high-speed densely integrated flexible electronics.

Read in full at arXiv.

This is an abstract of a preprint hosted on an independent third party site. It has not been peer reviewed but is currently under consideration at Nature Communications.

Go to the profile of Nature Communications

Nature Communications

Nature Research, Springer Nature